Akhavan, O. and Moshfegh, A. Z. (2007) Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(100). APPLIED SURFACE SCIENCE, 254 (2). 548-551 . ISSN 0169-4332
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Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N-2 ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 degrees C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by theta-2 theta X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano -thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 degrees C. (c) 2007 Elsevier B.V. All rights reserved.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||04 Nov 2009 07:48|
|Last Modified:||04 Nov 2009 07:48|
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