Nano Archive

Carbon nanostructures on silicon substrates suitable for nanolithography

Abdi , Y. and Mohajerzadeh , S. and Hoseinzadegan , H. and Koohsorkhi , J. (2006) Carbon nanostructures on silicon substrates suitable for nanolithography. Appl. Phys. Lett., 88 (5). 053124. ISSN 0003-6951

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Abstract

We report the application of vertically grown carbon nanotubes (CNTs) for submicron and nanolithography. The growth of CNTs is performed on silicon substrates using a nickel-seeded plasma-enhanced chemical vapor deposition method at a temperature of 650 °C and with a mixture of C2H2 and H2. The grown CNTs are encapsulated by a titanium-dioxide film and then mechanically polished to expose the buried nanotubes, and a plasma ashing step finalizes the process. The emission of electrons from the encapsulated nanotubes is used to write patterns on a resist-coated substrate placed opposite to the main CNT holding one. Scanning electron microscope has been used to investigate the nanotubes and the formation of nano-metric lines. Also a novel approach is presented to create isolated nanotubes from a previously patterned cluster growth. ©2006 American Institute of Physics

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7295
Deposited By:JNCASR
Deposited On:28 Oct 2009 09:41
Last Modified:28 Oct 2009 09:41

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