Nano Archive

Light-emitting nano-porous silicon structures fabricated using a plasma hydrogenation technique

Abdi, Y. and Derakhshandeh, J. and Hashemi, P. and Mohajerzadeh, S. and Karbassian , F. and Nayeri, F. and Arzi, E. and Robertson, M. D and Radamson, H. (2005) Light-emitting nano-porous silicon structures fabricated using a plasma hydrogenation technique. Materials Science and Engineering: B, 124-125 . 483-487 . ISSN 0921-5107

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Abstract

The preparation of porous silicon films by DC-plasma hydrogenation and subsequent annealing of amorphous silicon films on silicon and glass substrates is reported for the first time. The effects of varying plasma power and annealing temperatures have been investigated and characterized by scanning-electron microscopy, transmission-electron microscopy, and photoluminescence. A plasma density of about 5.5 W/m(2) and hydrogenation-annealing temperatures of about 400 degrees C was found to be suitable for the formation of nano-crystalline silicon films with grain diameters of the order of 3-10 nm. The intensity and wavelength of the emitted visible light were found to depend on the hydrogenation and annealing conditions, and patterning of the silicon films using standard lithography allowed the creation of light-emitting patterns. (c) 2005 Elsevier B.V. All rights reserved.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7263
Deposited By:JNCASR
Deposited On:28 Oct 2009 05:20
Last Modified:28 Oct 2009 05:20

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