Gu, Zhanjun and Liu, Feng and Howe, Jane Y. and Paranthaman, M. Parans and Zhengwei, Pan (2009) Germanium-catalyzed hierarchical Al2O3 and SiO2 nanowire bunch arrays. Nanoscale . ISSN 10.1039/b9nr00040b
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Germanium (Ge), a Group IV semiconductor, was recently used as an effective catalyst to grow individual, single-crystalline ZnO nanowires through a vapor-liquid-solid (VLS) process [Pan et al., Angew. Chem., Int. Ed., 2005, 44, 274–278]. Here, we show that Ge can also act as an efficient catalyst for the large-scale growth of highly aligned, closely-packed polycrystalline Al2O3 and amorphous SiO2 nanowire bunch arrays. The Ge-catalyzed Al2O3 and SiO2 nanowire growth exhibits many interesting growth behaviors including (i) multiple nanowire growth catalyzed by one micrometer-size Ge particle, (ii) branching growth and (iii) batch-by-batch growth. These growth phenomena are distinct from the conventional Au-catalyzed nanowire growth but are analogous to the recently reported Ga-catalyzed SiO2 nanowire growth. It is anticipated that many other oxide nanowires and nanowire assemblies can be synthesized through the Ge-catalyzed VLS process. The Ge-catalyzed Al2O3 and SiO2 nanowires emit strong visible light under ultraviolet light excitation.
|Subjects:||Material Science > Nanochemistry|
|Deposited On:||30 Sep 2009 12:56|
|Last Modified:||30 Sep 2009 12:56|
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