Nano Archive

Electrodeposition and characterisation of CuInSe2 for applications in thin film solar cells

Silva, K. T. L. De and Priyantha, W. A. A. and Jayanetti, J. K. D. S. and Chithrani, B. D. and Siripala, W. and Blake, K. and Dharmadas, I. M. (2001) Electrodeposition and characterisation of CuInSe2 for applications in thin film solar cells. Thin Solid Films, 382 (1-2). pp. 158-163.

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Abstract

Copper indium diselenide (CuInSe2) layers have been grown at room temperature by electrochemical deposition technique in an aqueous medium. Resulting thin films have been characterised using XRD, XRF, XPS, GDOES and SEM for structural, stoichiometric and morphological properties. A considerable influence of the deposition potential on the atomic composition of In and Se present in the film was observed. Cu composition remains the same within the deposition potentials used in this investigation. The deposited layers are polycrystalline and annealing at 350 degreesC for 30 min improves the crystallinity. The film quality deteriorates due to dissociation when annealed at temperatures above 350 degreesC. Excessive annealing results in a surface which is depleted in Cu and rich in In and Se. (C) 2001 Elsevier Science B.V. All rights reserved.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7156
Deposited By:JNCASR
Deposited On:28 Oct 2009 05:21
Last Modified:28 Oct 2009 05:21

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