Wang, J. B. and Li, K. and Zhong, X. L. and Zhou, Y. C. and Fang, X. S. and Tang, C. C. and Bando, Y. (2009) Considerable Enhancement of Field Emission of SnO2 Nanowires by Post-Annealing Process in Oxygen at High Temperature. Nanoscale Research Letters, 4 (10). pp. 1135-1140. ISSN 1931-7573 (Print) 1556-276X (Online)
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Official URL: http://www.springerlink.com/content/5273u2413754np...
Abstract
The field emission properties of SnO2 nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2 nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2 nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2 nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2 at the same applied electric field of 5.0 V/μm.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SnO2 nanowires - Chemical vapor deposition - Field emission - Annealing |
| Subjects: | Physical Science > Nanophysics Physical Science > Nanoelectronics |
| ID Code: | 7145 |
| Deposited By: | Lesley Tobin |
| Deposited On: | 16 Sep 2009 09:57 |
| Last Modified: | 16 Sep 2009 09:57 |
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