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ELECTRICAL-CONDUCTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF CDSE0.8TE0.2 THIN-FILMS

Sebastian , P. J. and Sivaramakrishan , V (1991) ELECTRICAL-CONDUCTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF CDSE0.8TE0.2 THIN-FILMS. JOURNAL OF MATERIALS SCIENCE, 26 (23). pp. 6443-6447. ISSN 0022-2461

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Abstract

Electrical resistance of CdSe0.8Te0.2 thin films were found to be dependent on various film parameters such as substrate temperature, film thickness, deposition rate and post-deposition heat treatment in different environments. A decrease in film resistivity was observed for thicker films and for those heat treated in vacuum. Films deposited at higher substrate temperatures and faster rates showed an increase in film resistivity. A spectrum of activation energies was observed in the films which fell within either of the activation energies observed in CdSe or CdTe films. Films heated in an oxygen environment showed an increase in film resistivity with a different activation energy. Transmission electron microscopy (TEM) of the films showed an improvement in crystallinity with increasing film thickness and substrate temperature, and a reduction in crystallinity with increasing deposition rate.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7106
Deposited By:JNCASR
Deposited On:02 Sep 2009 11:32
Last Modified:02 Sep 2009 11:32

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