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A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry

Malar, P. and Kasiviswanathan , S. (2005) A comparative study of CuInSe2 and CuIn3Se5 films using transmission electron microscopy, optical absorption and Rutherford backscattering spectrometry. SOLAR ENERGY MATERIALS AND SOLAR CELLS , 88 (3). pp. 281-292. ISSN 0927-0248

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Abstract

CuInSe2 and CuIn3Se5 films were grown by stepwise flash evaporation onto glass and Si substrates held at different temperatures. Transmission electron microscopy (TEM) studies revealed that the films grown above 370 K were polycrystalline, with CuInSe2 films exhibiting larger average grain size than Culn(3)Se(5). Optical absorption studies yielded hand gaps of 0.97 +/- 0.02 and 1.26 +/- 0.02eV for CuInSe2 and Culn(3)Se(5), respectively. Rutherford backscattering spectrometry (RBS) study of the films on Si showed that CulnSe(2)/Si structures included an inhomogeneous interface region consisting of Cu and Si, whereas CuIn3Se5/Si structures presented sharp interface. (c) 2004 Elsevier B.V. All rights

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7103
Deposited By:JNCASR
Deposited On:02 Sep 2009 11:32
Last Modified:02 Sep 2009 11:32

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