Nano Archive


Babu, V. Suresh and Vaya, P. R. (1989) STUDIES ON HOT WALL DEPOSITED ZN3P2 THIN-FILM SURFACES AND INTERFACES. Applied Surface Science, 37 (3). pp. 283-290. ISSN 0169-4332

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


Thin films of Zn3P2 have been grown on mica and glass substrates at various growth temperatures ranging from 200 to 350°C by the hot wall deposition technique. The surface morphology of these films was studied by the scanning electron microscope (SEM). The grain size was observed to be increasing with increasing substrate temperature. The electrical resistivities of these films were very high (−105 micro cm) depending upon the preparation conditions like substrate temperature and pressure of the ambient gas during growth etc. The resistivity was brought down to a range 102 to 103 micro cm by silver doping during growth of the film. Schottky barriers were formed on these doped thin films using Al (i) on the as-grown film surface and (ii) on a surface after chemical treatment using dilute NaOH, acetone and deionized water in sequence. A marked change in the characteristics of Al---Zn3P2 junctions was observed after surface etching.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7091
Deposited By:JNCASR
Deposited On:02 Sep 2009 10:27
Last Modified:02 Sep 2009 10:27

Repository Staff Only: item control page