Nano Archive

A study of band-bending and barrier height variation in thin film n-CdSe0.5Te0.5 photoanode/polysulphide junctions

Das, V. Damodara and Damodare, Laxmikant (1996) A study of band-bending and barrier height variation in thin film n-CdSe0.5Te0.5 photoanode/polysulphide junctions. Solid State Communications, 99 (10). pp. 723-728. ISSN 0038-1098

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Abstract

Polycrystalline thin films of n-CdSe0.5Te0.5 were deposited in a vacuum of 5 × 10−5 torr by thermal flash evaporation with a deposition rate of 20 ± 1 Ås−1 on indium oxide coated glass plates [σ = 1.25 × 104 (Ωcm)−1] held at a temperature of 473 K. The change in the pH value of the polysulphide electrolyte from 12.5 to 8.0 leads to a fall in the extent of band bending from 680 meV to 420 meV and decrease in the barrier height from 690 meV to 430 meV. The barrier heights as calculated from Mott-Schottky plots and current-voltage plots are compared. From the reverse saturation current (I0) variation with temperature, it is found that the barrier height decreases from 690 meV to 430 meV with decrease in pH of the electrolyte from 12.5 to 8.0. The variation of diode ideality factor n, with temperature was also studied. It was found that the diode ideality factor n, decreases with increase of temperature, viz. from 3.00 to 2.00 with rise in temperature from 300 K to 333 K. This is due to the additional injection of electrons from the bulk into the junction region because of increase in temperature.

Item Type:Article
Subjects:Physical Science > Nanophysics
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
Divisions:Faculty of Engineering, Science and Mathematics > School of Physics
Faculty of Engineering, Science and Mathematics > School of Chemistry
ID Code:7086
Deposited By:JNCASR
Deposited On:02 Sep 2009 07:37
Last Modified:02 Sep 2009 07:37

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