Bhattacharya , E. and Sreeraman , S. and Padmaram , R. (2000) Effect of hydrogen dilution on amorphous hydrogenated silicon thin film transistors. PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, 3975 . pp. 345-348. ISSN 0277-786X
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We have studied the effect of gas phase hydrogen dilution on the properties or amorphous hydrogenated silicon (a-Si:H) thin films and on the characteristics of Thin Film Transistors (TFTs) in which the active layer is grown with varying hydrogen dilution.. The films showed an initial decrease in conductivity followed by an increase with hydrogen dilution. We think that microcrystallisation at large hydrogen dilution could be the cause of the increase in conductivity. TFTs were made in the inverted staggered structure with a silicon nitride layer as the insulator. We see a factor of 20 improvement in mobility as the gas phase hydrogen concentration is increased from 0% to about 98% without a significant change in the current ON/OFF ratio.
|Subjects:||Physical Science > Nanophysics|
Physical Science > Nano objects
Material Science > Nanochemistry
Material Science > Nanostructured materials
|Divisions:||Faculty of Engineering, Science and Mathematics > School of Physics|
Faculty of Engineering, Science and Mathematics > School of Chemistry
|Deposited On:||01 Sep 2009 10:48|
|Last Modified:||01 Sep 2009 10:48|
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