Tetelbaum, D. I. and Gorshkov, O. N. and Trushun, S. A. and Revin, D. G. and Gaponova, D. M. and Eckstein, W (2000) The enhancement of luminescence in ion implanted Si quantum dots in SiO2 matrix by means of dose alignment and doping. Nanotechnology, 11 (4). pp. 295-297.
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Official URL: http://stacks.iop.org/0957-4484/11/295
The Si+-dose dependence of the photoluminescence (PL) intensity at l[?]800 nm for SiO2 with Si nanoinclusions (NIs) produced by ion implantation is studied. It is shown that this dependence is determined by the increase of the surface density of NIs, the mean size of NIs being constant until they overlap. Doping by phosphorus enhances the PL due to the joint action of two mechanisms: (i) the supply of additional electrons from the donors to the conduction band of quantum dots and (ii) the passivation of dangling bonds by phosphorus atoms.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||16 Mar 2009 10:41|
|Last Modified:||26 Mar 2009 14:37|
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