Davydov, V. Yu. and Golubev, V. G. and Kartenko, N. F. and Kurdyukov, D. A. and Pevtsov, A. B. and Sharenkova, N. V. and Brogueira, P and Schwarz, R (2000) Fabrication and structural studies of opal-III nitride nanocomposites. Nanotechnology, 11 (4). pp. 291-294.
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Official URL: http://stacks.iop.org/0957-4484/11/291
In this paper, regular three-dimensional systems of GaN, InN and InGaN nanoclusters have been fabricated for the first time in a void sublattice of artificial opal. The opal consisted of 220 nm diameter close packed amorphous silica spheres and had a regular sublattice of voids accessible to filling by other substances. GaN, InN and InGaN were synthesized directly in the opal voids from precursors such as metal salts and nitrogen hydrides. The composites' structures have been characterized using x-ray diffraction, Raman spectroscopy, atomic force microscopy and optical measurements.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||16 Mar 2009 10:41|
|Last Modified:||26 Mar 2009 12:59|
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