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Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3 Nanowires

Shi, Jen-Bin and Chen, Chih-Jung and Lin, Ya-Ting and Hsu, Wen-Chia and Chen, Yu-Cheng and Wu, Po-Feng (2009) Anodic Aluminum Oxide Membrane-Assisted Fabrication of β-In2S3 Nanowires. Nanoscale Research Letters, 4 (9). pp. 1059-1063. ISSN 1931-7573 (Print) 1556-276X (Online)

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In this study, β-In2S3 nanowires were first synthesized by sulfurizing the pure Indium (In) nanowires in an AAO membrane. As FE-SEM results, β-In2S3 nanowires are highly ordered, arranged tightly corresponding to the high porosity of the AAO membrane used. The diameter of the β-In2S3 nanowires is about 60 nm with the length of about 6–8 μm. Moreover, the aspect ratio of β-In2S3 nanowires is up to 117. An EDS analysis revealed the β-In2S3 nanowires with an atomic ratio of nearly S/In = 1.5. X-ray diffraction and corresponding selected area electron diffraction patterns demonstrated that the β-In2S3 nanowire is tetragonal polycrystalline. The direct band gap energy (Eg) is 2.40 eV from the optical measurement, and it is reasonable with literature.

Item Type:Article
Uncontrolled Keywords:Nanomaterials - In2S3 - Nanowire - AAO
Subjects:Material Science > Nanofabrication processes and tools
Technology > Manufacturing processes for nanotechnology
Physical Science > Nanoelectronics
Physical Science > Nanomagnetics
ID Code:6924
Deposited By:Lesley Tobin
Deposited On:27 Aug 2009 13:48
Last Modified:27 Aug 2009 13:48

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