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Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography

Pezzoli, F. and Stoffel, M. and Merdzhanova, T. and Rastelli, A. and Schmidt, O. G. (2009) Alloying and Strain Relaxation in SiGe Islands Grown on Pit-Patterned Si(001) Substrates Probed by Nanotomography. Nanoscale Research Letters, 4 (9). pp. 1073-1077. ISSN 1931-7573 (Print) 1556-276X (Online)

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Official URL: http://www.springerlink.com/content/k71jtkg9183235...

Abstract

The three-dimensional composition profiles of individual SiGe/Si(001) islands grown on planar and pit-patterned substrates are determined by atomic force microscopy (AFM)-based nanotomography. The observed differences in lateral and vertical composition gradients are correlated with the island morphology. This approach allowed us to employ AFM to simultaneously gather information on the composition and strain of SiGe islands. Our quantitative analysis demonstrates that for islands with a fixed aspect ratio, a modified geometry of the substrate provides an enhancement of the relaxation, finally leading to a reduced intermixing.

Item Type:Article
Uncontrolled Keywords:SiGe - Island - Alloying - Wet etching - Tomography - AFM - Lateral ordering
Subjects:Analytical Science > Microscopy and probe methods
Material Science > Nanofabrication processes and tools
Material Science > Nanochemistry
ID Code:6921
Deposited By:Lesley Tobin
Deposited On:26 Aug 2009 17:53
Last Modified:26 Aug 2009 17:53

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