Aleshkin, V. Ya. and Reggiani, L and Reklaitis, A (2000) Current instability and shot noise in nanometric semiconductor heterostructures. Nanotechnology, 11 (4). pp. 370-374.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/0957-4484/11/370
Abstract
We investigate electron transport and shot noise in a single-barrier GaAs/AlGaAs heterostructure of nanometric size in the presence of ballistic and thermalized carriers. The coupling between space charge and the dependence of the transmission coefficient on energy is found to provide the positive feedback which enhances shot noise and ultimately leads to a current instability of S type. Theoretical results are in qualitative agreement with existing experiments and confirm recent Monte Carlo simulations evidencing shot-noise enhancement in GaAs/AlGaAs heterostructures.
| Item Type: | Article |
|---|---|
| ID Code: | 692 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 16 Mar 2009 10:41 |
| Last Modified: | 26 Mar 2009 11:02 |
Repository Staff Only: item control page
