Nano Archive

Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy

Cirlin, G. E. and Egorov, V. A. and Volovik, B. V. and Tsatsul'nikov, A. F. and Ustinov, V. M. and Ledentsov, N. N. and Zakharov, N. D. and Werner, P and G"osele, U (2001) Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy. Nanotechnology, 12 (4). pp. 417-420.

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Official URL: http://stacks.iop.org/0957-4484/12/417

Abstract

The optical and structural properties of the Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy are investigated. It is shown that at relatively high growth temperatures <span class='mathrm'>&gt;</span>600<span class='mathrm'><sup>¸</sup>irc</span> C new features appear in the photoluminescence spectra. It is found that these features correspond to formation of the germanium nano-inclusions in a silicon matrix.

Item Type:Article
ID Code:689
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:26 Mar 2009 12:25

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