Cirlin, G. E. and Egorov, V. A. and Volovik, B. V. and Tsatsul'nikov, A. F. and Ustinov, V. M. and Ledentsov, N. N. and Zakharov, N. D. and Werner, P and G"osele, U (2001) Optical and structural properties of Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy. Nanotechnology, 12 (4). pp. 417-420.
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Official URL: http://stacks.iop.org/0957-4484/12/417
Abstract
The optical and structural properties of the Ge submonolayer nano-inclusions in a Si matrix grown by molecular beam epitaxy are investigated. It is shown that at relatively high growth temperatures <span class='mathrm'>></span>600<span class='mathrm'><sup>¸</sup>irc</span> C new features appear in the photoluminescence spectra. It is found that these features correspond to formation of the germanium nano-inclusions in a silicon matrix.
| Item Type: | Article |
|---|---|
| ID Code: | 689 |
| Deposited By: | Prof. Alexey Ivanov |
| Deposited On: | 16 Mar 2009 10:41 |
| Last Modified: | 26 Mar 2009 12:25 |
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