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Pulsed ion-beam synthesis of β-FeSi2 precipitate layers in Si(100)

Batalov, R. I. and Bayazitov, R. M. and Khaibullin, I. B. and Terukov, E. I. and Kudoyarova, V. Kh. (2001) Pulsed ion-beam synthesis of β-FeSi2 precipitate layers in Si(100). Nanotechnology, 12 (4). pp. 409-412.

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Official URL: http://stacks.iop.org/0957-4484/12/409

Abstract

Semiconducting iron disilicide (b-FeSi2) precipitate layers were synthesized by means of Fe+ implantation into Si(100) at an energy of 40 keV and a dose of 1<span class='mathrm'>×</span>1016 cm-2 followed by nanosecond pulsed ion-beam treatment of the implanted Si layers. Glancing incidence x-ray diffraction (GIXRD) and atomic force microscopy (AFM) were employed for the structural characterization, and optical absorption and photoluminescence (PL) spectroscopies were used for the optical characterization of the precipitate layers formed. The GIXRD results indicate the formation of oriented b-FeSi2 precipitates surrounded by a polycrystalline Si matrix. AFM data show the precipitate sizes to be in the range of 25-90 nm. The results of measuring the optical absorption indicate that the formed precipitates have a direct-band structure with an energy gap of 0.83 eV. It is shown that the 1.5 <span class='mathrm'>μ</span>m PL signal of b-FeSi2 precipitates is observed up to a temperature of 210 K and does not saturate up to the pump power of 250 mW.

Item Type:Article
ID Code:685
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:26 Mar 2009 11:40

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