Pasquali, L and D'Addato, S and Selvaggi, G and Nannarone, S and Sokolov, N S and Suturin, S M and Zogg, H (2001) Formation of CaF2 nanostructures on Si(001). Nanotechnology, 12 (4). pp. 403-408.
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Official URL: http://stacks.iop.org/0957-4484/12/403
Initial stages of epitaxial growth and formation of CaF2 nanostructures on Si(001) were studied. A variety of nanostructures were grown including ultrathin two-dimensional layers at 750 <span class='mathrm'><sup>¸</sup>irc</span>C, quasi-one-dimensional stripes at 650 <span class='mathrm'><sup>¸</sup>irc</span>C and well-ordered dots at lower growth temperatures. Atomic force microscopy and reflection high-energy electron diffraction were used to measure the nanostructure shape and lattice orientation. The evolution of the surface electronic structure under different growth conditions was studied by ultraviolet photoelectron spectroscopy and metastable de-excitation spectroscopy. The leading role of the wetting layer in high-temperature formation of the fluorite-silicon interface was established.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||16 Mar 2009 10:41|
|Last Modified:||20 Mar 2009 08:58|
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