Nano Archive

Formation of CaF2 nanostructures on Si(001)

Pasquali, L and D'Addato, S and Selvaggi, G and Nannarone, S and Sokolov, N S and Suturin, S M and Zogg, H (2001) Formation of CaF2 nanostructures on Si(001). Nanotechnology, 12 (4). pp. 403-408.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


Initial stages of epitaxial growth and formation of CaF2 nanostructures on Si(001) were studied. A variety of nanostructures were grown including ultrathin two-dimensional layers at 750 <span class='mathrm'><sup>¸</sup>irc</span>C, quasi-one-dimensional stripes at 650 <span class='mathrm'><sup>¸</sup>irc</span>C and well-ordered dots at lower growth temperatures. Atomic force microscopy and reflection high-energy electron diffraction were used to measure the nanostructure shape and lattice orientation. The evolution of the surface electronic structure under different growth conditions was studied by ultraviolet photoelectron spectroscopy and metastable de-excitation spectroscopy. The leading role of the wetting layer in high-temperature formation of the fluorite-silicon interface was established.

Item Type:Article
ID Code:684
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:20 Mar 2009 08:58

Repository Staff Only: item control page