Nano Archive

Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures

Prokofiev, A A and Yassievich, I N and Blom, A and Odnoblyudov, M A and Chao, K-A (2001) Configuration interaction applied to resonant states in semiconductors and semiconductor nanostructures. Nanotechnology, 12 (4). pp. 457-461.

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Official URL: http://stacks.iop.org/0957-4484/12/457

Abstract

A new approach for calculation of resonant state parameters is developed. The method proposed allows us to solve different scattering problems, such as scattering and capture probability as well as calculations of shifts and widths of energy levels. It has been applied to the problem of resonant states induced by impurities in the barrier of quantum wells and by strain in uniaxially stressed germanium.

Item Type:Article
ID Code:682
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:20 Mar 2009 08:58

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