Zou, Min and Cai, Li and Wang, Hengyu and Brown, William (2006) Nano-aluminum-induced crystallization of amorphous silicon. Materials Letters, 60 (11). 1379 - 1382.
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Official URL: http://www.sciencedirect.com/science/article/B6TX9...
Abstract
This paper reports the successful fabrication of smooth, polycrystalline silicon films with very large crystallites produced by nanometer thick aluminum-induced crystallization (AIC) of plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) and the effect of annealing temperature ramp up time on grain size. The study shows that, compared to traditional AIC, nano-AIC produces much smoother polycrystalline silicon films with very large crystallites. In addition, unlike traditional AIC, the grain sizes produced by nano-AlC increase considerably with annealing temperature ramp-up time.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Amorphous; Silicon; Crystallization; Aluminum; Nanometer |
| Subjects: | Material Science > Nanostructured materials |
| ID Code: | 6807 |
| Deposited By: | SPI |
| Deposited On: | 06 Feb 2010 11:41 |
| Last Modified: | 06 Feb 2010 11:41 |
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