Zou, Min and Cai, Li and Wang, Hengyu and Brown, William (2006) Nano-aluminum-induced crystallization of amorphous silicon. Materials Letters, 60 (11). 1379 - 1382.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://www.sciencedirect.com/science/article/B6TX9...
This paper reports the successful fabrication of smooth, polycrystalline silicon films with very large crystallites produced by nanometer thick aluminum-induced crystallization (AIC) of plasma-enhanced chemical vapor deposited (PECVD) amorphous silicon (a-Si:H) and the effect of annealing temperature ramp up time on grain size. The study shows that, compared to traditional AIC, nano-AIC produces much smoother polycrystalline silicon films with very large crystallites. In addition, unlike traditional AIC, the grain sizes produced by nano-AlC increase considerably with annealing temperature ramp-up time.
|Uncontrolled Keywords:||Amorphous; Silicon; Crystallization; Aluminum; Nanometer|
|Subjects:||Material Science > Nanostructured materials|
|Deposited On:||06 Feb 2010 11:41|
|Last Modified:||06 Feb 2010 11:41|
Repository Staff Only: item control page