Neizvestny, I. G. and Suprun, S. P. and Shumsky, V. N. and Talochkin, A. B. and Fedosenko, E. V. and Burbaev, T. M. and Kurbatov, V. A. (2001) Quantum dots of Ge in a GaAs/ZnSe/Ge unstrained heterosystem: fabrication and properties. Nanotechnology, 12 (4). pp. 437-440.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://stacks.iop.org/0957-4484/12/437
For the very first time ensembles of Ge quantum dots have been formed in an unstrained heterosystem of GaAs/ZnSe/Ge. The geometric properties (dimensional characteristics) and electronic structure of the islands were studied using scanning tunnelling microscopy, Raman spectroscopy and photoluminescence. This paper was presented at the 3rd Russian Workshop on Nanophotonics, Nizhnii Novgorod, Russia, 26-29 March 2001.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||16 Mar 2009 10:41|
|Last Modified:||26 Mar 2009 12:02|
Repository Staff Only: item control page