Nano Archive

Technology for nanoperiodic doping of a metal–oxide–semiconductor field-effect transistor channel using a self-forming wave-ordered structure

Smirnov, V. K. and Kibalov, D. S. and Orlov, O. M. and Graboshnikov, V. V. (2003) Technology for nanoperiodic doping of a metal–oxide–semiconductor field-effect transistor channel using a self-forming wave-ordered structure. Nanotechnology, 14 (7). pp. 709-715.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://stacks.iop.org/0957-4484/14/709

Abstract

A self-forming nanostructure--a wave-ordered structure with a controllable period (20-180 nm)--results from the off-normal bombardment of amorphous silicon layers by low-energy ([?] 1-10 keV) nitrogen ions. The nanostructure has been modified by reactive-ion etching in plasma to form a periodic nanomask on the surface of the channel region of a metal-oxide-semiconductor field-effect transistor (MOSFET). Implantation of arsenic ions through the nanomask followed by the technological steps completing the fabrication of the MOSFET resulted in a periodically doped channel field-effect transistor (PDCFET), which can be considered as a chain of short-channel MOSFETs with a common gate. Having worse subthreshold characteristics, PDCFETs show greater drain current and transconductance than to MOSFETs without a periodically doped channel. This improvement in device performance is attributed to the fact that the channel length is cut by the length of high-conductivity doped areas in the channel and that the voltage is distributed between the areas, depressing the scaling rules for short-channel MOSFETs and allowing the channel to be less doped between the areas, thus keeping drift mobility high.

Item Type:Article
ID Code:667
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:26 Mar 2009 14:50

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