Valakh, M. Ya. and Yukhymchuk, V. O. and Dzhagan, V. M. and Lytvyn, O. S. and Milekhin, A. G. and Nikiforov, A. I. and Pchelyakov, O. P. and Alsina, F and Pascual, J (2005) Raman study of self-assembled SiGe nanoislands grown at low temperatures. Nanotechnology, 16 (9). pp. 1464-1468.
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Official URL: http://stacks.iop.org/0957-4484/16/1464
We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 <span class='mathrm'><sup>¸</sup>irc</span>C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell.
|Deposited By:||Prof. Alexey Ivanov|
|Deposited On:||16 Mar 2009 10:41|
|Last Modified:||26 Mar 2009 14:13|
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