Nano Archive

Raman study of self-assembled SiGe nanoislands grown at low temperatures

Valakh, M. Ya. and Yukhymchuk, V. O. and Dzhagan, V. M. and Lytvyn, O. S. and Milekhin, A. G. and Nikiforov, A. I. and Pchelyakov, O. P. and Alsina, F and Pascual, J (2005) Raman study of self-assembled SiGe nanoislands grown at low temperatures. Nanotechnology, 16 (9). pp. 1464-1468.

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We report on Raman scattering measurements on Si-capped Ge quantum structures grown by molecular beam epitaxy on Si(001) at low temperatures. We find a double band structure in the Ge-Ge frequency range for nanoislands grown at substrate temperatures ranging in the interval 300-500 <span class='mathrm'><sup>¸</sup>irc</span>C. Complementary information has been obtained from performing Raman scattering experiments on annealed samples. The results are interpreted in terms of a model that considers quantum structures (hut clusters) composed of a strained Ge core and a more relaxed SiGe shell.

Item Type:Article
ID Code:660
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:26 Mar 2009 14:13

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