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Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

Tchernycheva, M and Harmand, J. C. and Patriarche, G and Travers, L and Cirlin, G. E. (2006) Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy. Nanotechnology, 17 (16). pp. 4025-4030.

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Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in~situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 <span class='mathrm'><sup>¸</sup>irc</span>C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 <span class='mathrm'><sup>¸</sup>irc</span>C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires.

Item Type:Article
ID Code:655
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:26 Mar 2009 12:29

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