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Kinetically-induced hexagonality in chemically grown silicon nanowires

Liu, Xiaohua and Wang, Dunwei (2009) Kinetically-induced hexagonality in chemically grown silicon nanowires. Nano Research, 2 (7). pp. 575-582. ISSN


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Various silicon crystal structures with different atomic arrangements from that of diamond have been observed in chemically synthesized nanowires. The structures are typified by mixed stacking mismatches of closely packed Si dimers. Instead of viewing them as defects, we define the concept of hexagonality and describe these structures as Si polymorphs. The small transverse dimensions of a nanowire make this approach meaningful. Unique among the polymorphs are cubic symmetry diamond and hexagonal symmetry wurtzite structures. Electron diffraction studies conducted with Au as an internal reference unambiguously confirm the existence of the hexagonal symmetry Si nanowires.

Item Type:Article
Uncontrolled Keywords:Silicon nanowires - hexagonality - polytypes - cohesive energy - chemical vapor deposition - kinetics
Subjects:Material Science > Nanofabrication processes and tools
Technology > Nanotechnology and energy applications
ID Code:6538
Deposited By:SPI
Deposited On:27 Jul 2009 16:25
Last Modified:29 Jul 2009 10:02

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