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Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001)

Yakimov, A. I. and Nikiforov, A. I. and Dvurechenskii, A. V. and Ulyanov, V. V. and Volodin, V. A. and Groetzschel, R (2006) Effect of the growth rate on the morphology and structural properties of hut-shaped Ge islands in Si(001). Nanotechnology, 17 (18). pp. 4743-4747.

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Official URL: http://stacks.iop.org/0957-4484/17/4743

Abstract

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500 <span class='mathrm'><sup>¸</sup>irc</span>C. We adjusted the Ge coverage, 6~monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02-2~ML~s[?]1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1~nm at R = 0.02~ML~s[?]1 to 9.8~nm at R = 2~ML~s[?]1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2~ML~s[?]1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content ([?]0.9).

Item Type:Article
ID Code:653
Deposited By:Prof. Alexey Ivanov
Deposited On:16 Mar 2009 10:41
Last Modified:26 Mar 2009 14:10

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