Othonos, Andreas and Zervos, Matthew and Tsokkou, Demetra (2009) Tin Oxide Nanowires: The Influence of Trap States on Ultrafast Carrier Relaxation. Nanoscale Research Letters, 4 (8). pp. 828-833.
Official URL: http://www.springerlink.com/content/05t963r442103u...
We have studied the optical properties and carrier dynamics in SnO2 nanowires (NWs) with an average radius of 50Â nm that were grown via the vaporâliquid solid method. Transient differential absorption measurements have been employed to investigate the ultrafast relaxation dynamics of photogenerated carriers in the SnO2 NWs. Steady state transmission measurements revealed that the band gap of these NWs is 3.77Â eV and contains two broad absorption bands. The first is located below the band edge (shallow traps) and the second near the center of the band gap (deep traps). Both of these absorption bands seem to play a crucial role in the relaxation of the photogenerated carriers. Time resolved measurements suggest that the photogenerated carriers take a few picoseconds to move into the shallow trap states whereas they take ~70Â ps to move from the shallow to the deep trap states. Furthermore the recombination process of electrons in these trap states with holes in the valence band takes ~2Â ns. Auger recombination appears to be important at the highest fluence used in this study (500Â Î¼J/cm2); however, it has negligible effect for fluences below 50Â Î¼J/cm2. The Auger coefficient for the SnO2 NWs was estimated to be 7.5Â Â±Â 2.5Â ÃÂ 10â31Â cm6/s.
|Uncontrolled Keywords:||SnO2 nanowires - Chemical vapour deposition - Carrier dynamics - Differential absorption spectroscopy|
|Subjects:||Physical Science > Photonics|
|Deposited On:||27 Jul 2009 17:12|
|Last Modified:||27 Jul 2009 17:12|
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