Paladugu, M and Zou, J and Guo, Y. N. and Zhang, X and Joyce, H. J. and Gao, Q and Tan, H. H. and Jagadish, C and Kim, Y (2009) Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores. Nanoscale Research Letters, 4 (8). pp. 846-849.
Official URL: http://www.springerlink.com/content/q32263460246hx...
GaAs was radially deposited on InAs nanowires by metalâorganic chemical vapor deposition and resultant nanowire heterostructures were characterized by detailed electron microscopy investigations. The GaAs shells have been grown in wurtzite structure, epitaxially on the wurtzite structured InAs nanowire cores. The fundamental reason of structural evolution in terms of material nucleation and interfacial structure is given.
|Uncontrolled Keywords:||Nanowire heterostructures - GaAs/InAs - Crystal structure|
|Subjects:||Material Science > Nanofabrication processes and tools|
|Deposited On:||27 Jul 2009 17:22|
|Last Modified:||27 Jul 2009 17:22|
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