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Magnetoresistance in Sn-Doped In2O3 Nanowires

Berengue, Olí­via M. and Lanfredi, Alexandre J. C. and Pozzi, Livia P. and Rey, José F. Q. and Leite, Edson R. and Chiquito, Adenilson J. (2009) Magnetoresistance in Sn-Doped In2O3 Nanowires. Nanoscale Research Letters, 4 (8). pp. 921-925.


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In this work, we present transport measurements of individual Sn-doped In2O3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77 K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.

Item Type:Article
Uncontrolled Keywords:Oxide nanowires - Weak localization - Electron transport - Electron–electron scattering
Subjects:Physical Science > Nanoelectronics
ID Code:6515
Deposited By:SPI
Deposited On:28 Jul 2009 10:28
Last Modified:28 Jul 2009 10:28

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