Berengue, Olívia M. and Lanfredi, Alexandre J. C. and Pozzi, Livia P. and Rey, José F. Q. and Leite, Edson R. and Chiquito, Adenilson J. (2009) Magnetoresistance in Sn-Doped In2O3 Nanowires. Nanoscale Research Letters, 4 (8). pp. 921-925.
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Official URL: http://www.springerlink.com/content/r58544510v135p...
Abstract
In this work, we present transport measurements of individual Sn-doped In2O3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77Â K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Oxide nanowires - Weak localization - Electron transport - Electron–electron scattering |
| Subjects: | Physical Science > Nanoelectronics |
| ID Code: | 6515 |
| Deposited By: | SPI |
| Deposited On: | 28 Jul 2009 10:28 |
| Last Modified: | 28 Jul 2009 10:28 |
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