Berengue, Olívia M. and Lanfredi, Alexandre J. C. and Pozzi, Livia P. and Rey, José F. Q. and Leite, Edson R. and Chiquito, Adenilson J. (2009) Magnetoresistance in Sn-Doped In2O3 Nanowires. Nanoscale Research Letters, 4 (8). pp. 921-925.
Official URL: http://www.springerlink.com/content/r58544510v135p...
In this work, we present transport measurements of individual Sn-doped In2O3 nanowires as a function of temperature and magnetic field. The results showed a localized character of the resistivity at low temperatures as evidenced by the presence of a negative temperature coefficient resistance in temperatures lower than 77Â K. The weak localization was pointed as the mechanism responsible by the negative temperature coefficient of the resistance at low temperatures.
|Uncontrolled Keywords:||Oxide nanowires - Weak localization - Electron transport - Electron–electron scattering|
|Subjects:||Physical Science > Nanoelectronics|
|Deposited On:||28 Jul 2009 10:28|
|Last Modified:||28 Jul 2009 10:28|
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