Shen, Guozhen and Chen, Di (2009) One-Dimensional Nanostructures and Devices of II-€“V Group Semiconductors. Nanoscale Research Letters, 4 (8). pp. 779-788.
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Official URL: http://www.springerlink.com/content/53q83424v07546...
Abstract
The II–V group semiconductors, with narrow band gaps, are important materials with many applications in infrared detectors, lasers, solar cells, ultrasonic multipliers, and Hall generators. Since the first report on trumpet-like Zn3P2 nanowires, one-dimensional (1-D) nanostructures of II–V group semiconductors have attracted great research attention recently because these special 1-D nanostructures may find applications in fabricating new electronic and optoelectronic nanoscale devices. This article covers the 1-D II–V semiconducting nanostructures that have been synthesized till now, focusing on nanotubes, nanowires, nanobelts, and special nanostructures like heterostructured nanowires. Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, and p–n heterojunction photodiode. We intent to provide the readers a brief account of these exciting research activities.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Nanowires - Nanotubes - Nanobelts - Semiconductors - Nanoelectronics |
| Subjects: | Physical Science > Nanoelectronics |
| ID Code: | 6513 |
| Deposited By: | SPI |
| Deposited On: | 28 Jul 2009 10:46 |
| Last Modified: | 28 Jul 2009 10:46 |
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