Nano Archive

Optimal design of integrally gated CNT field-emission devices using a genetic algorithm

Chen, P. Y. and Chen, C. H. and Wu, J. S. and Wen, H. C. and Wang, W. P. (2007) Optimal design of integrally gated CNT field-emission devices using a genetic algorithm. NANOTECHNOLOGY, 18 (39).

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/18/39/395...

Abstract

A method to optimize the focusing quality of integrally gated CNT field- emission ( FE) devices by combining field- emission modeling and a computational intelligence technique, genetic algorithm ( GA), is proposed and demonstrated. In this work, the e- beam shape, as a characteristic parameter of electron- optical properties, is calculated by field- emission simulation modeling. Using a design tool that combines GA and physical modeling, a set of structural and electrical parameters for four FE device groups, including double- gate, triple- gate, quadruple- gate and quintuple- gate type, were optimized. The resultant FE devices exhibit satisfactory e- beam focusabilities and the extracted parameters with the best performance for each type of FE device were represented to be fabricated by a VLSI technique. The GA- based automatic design parameter extraction will significantly benefit the design of integrated electron- optical systems for versatile vacuum micro- and nano-electronic applications.

Item Type:Article
Uncontrolled Keywords:GRADIENT-BASED OPTIMIZATION; TRIODE STRUCTURE; EMITTER ARRAYS; CARBON; SIMULATION; ELECTRODE; DISPLAY
Subjects:Physical Science > Nanoelectronics
ID Code:6453
Deposited By:IoN
Deposited On:23 Sep 2009 11:52
Last Modified:23 Sep 2009 11:52

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