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Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching

Chiu, C. H. and Lo, M. H. and Lai, C. F. and Lu, T. C. and Huang, H. W. and Chang, Y. A. and Hsueh, T. H. and Yu, C. C. and Kuo, H. C. and Wang, S. C. and Lin, C. F. and Kuo, Y. K. (2007) Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching. NANOTECHNOLOGY, 18 (33).

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Official URL: http://www.iop.org/EJ/abstract/-search=66088961.1/...

Abstract

In this study, we have fabricated In0.3Ga0.7N/GaN green emission nanorods and demonstrated optical enhancement by photoluminescence (PL) measurements. An enhancement factor of 3.5 and an emission peak blue-shift of 6.6 nm were observed at 300 K for the green emission nanorods structure in comparison to the as-grown flat surface structure. The blue-shift phenomenon from the nanorod structure could be caused by a partial reduction of the internal piezoelectric field. However, the similar carrier decay time for the green emission nanorod structure and the as-grown flat surface structure observed in low-temperature time-resolved PL measurements indicates that the dominant optical enhancement mechanism of the green emission nanorod structure could be mainly resulting from the large emission surface areas and the multiple scattering paths between the nanorods.

Item Type:Article
Uncontrolled Keywords:LIGHT-EMITTING-DIODES; GALLIUM NITRIDE NANORODS; GAN
Subjects:Physical Science > Photonics
ID Code:6450
Deposited By:IoN
Deposited On:24 Sep 2009 10:15
Last Modified:24 Sep 2009 10:15

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