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Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies

Bernardi, A. and Alonso, M. I. and Reparaz, J. S. and Goni, A. R. and Lacharmoise, P. D. and Osso, J. O. and Garriga, M. (2007) Evolution of strain and composition during growth and capping of Ge quantum dots with different morphologies. NANOTECHNOLOGY, 18 (47).

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Official URL: http://www.iop.org/EJ/abstract/-search=66090181.1/...

Abstract

We follow the growth of islands with different shapes by monitoring the strain relaxation by reflection high energy electron diffraction (RHEED). Comparing a bimodal ensemble of pyramids and domes with a monomodal distribution of C-induced domes, we observe different relaxation pathways and a growth mode change from Stranski-Krastanow to Volmer-Weber. We also study the changes induced by the capping process with Si. Small strains in thin cap layers are revealed by spectroscopic ellipsometry. Raman spectroscopy is employed to probe the built-in strain and silicon intermixing in different types of islands, evidencing that smaller islands are enriched in Si and effectively recompressed, whereas bigger relaxed dots remain substantially unaffected.

Item Type:Article
Uncontrolled Keywords:ENERGY ELECTRON-DIFFRACTION; RAMAN-SCATTERING; CARBON; NANOSTRUCTURES; ISLANDS; SI(001); LAYERS; SI; DENSITY; SURFACE
Subjects:Analytical Science > Microscopy and probe methods
ID Code:6441
Deposited By:IoN
Deposited On:24 Sep 2009 11:19
Last Modified:24 Sep 2009 11:19

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