Jang, Jaewon and Cho, Kyoungah and Lee, Sang Heon and Kim, Sangsig (2008) Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals. NANOTECHNOLOGY, 19 (1).
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Official URL: http://www.iop.org/EJ/abstract/-search=66090634.1/...
Abstract
Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.1 cm(2) V-1 s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.0 cm(2) V-1 s(-1).
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | FIELD-EFFECT TRANSISTORS; SIO2 |
| Subjects: | Material Science > Functional and hybrid materials Physical Science > Nanoelectronics |
| ID Code: | 6436 |
| Deposited By: | IoN |
| Deposited On: | 24 Sep 2009 11:44 |
| Last Modified: | 24 Sep 2009 11:44 |
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