Nano Archive

Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Jang, Jaewon and Cho, Kyoungah and Lee, Sang Heon and Kim, Sangsig (2008) Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals. NANOTECHNOLOGY, 19 (1).

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Official URL: http://www.iop.org/EJ/abstract/-search=66090634.1/...

Abstract

Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.1 cm(2) V-1 s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.0 cm(2) V-1 s(-1).

Item Type:Article
Uncontrolled Keywords:FIELD-EFFECT TRANSISTORS; SIO2
Subjects:Material Science > Functional and hybrid materials
Physical Science > Nanoelectronics
ID Code:6436
Deposited By:IoN
Deposited On:24 Sep 2009 11:44
Last Modified:24 Sep 2009 11:44

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