Nano Archive

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Rossler, C. and Bichler, M. and Schuh, D. and Wegscheider, W. and Ludwig, S. (2008) Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures. NANOTECHNOLOGY, 19 (16).

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Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/ AlGaAs heterostructure. Quantum point contacts and ( double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
ID Code:6418
Deposited By:IoN
Deposited On:25 Sep 2009 09:40
Last Modified:25 Sep 2009 09:40

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