Rossler, C. and Bichler, M. and Schuh, D. and Wegscheider, W. and Ludwig, S. (2008) Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures. NANOTECHNOLOGY, 19 (16).
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Official URL: http://www.iop.org/EJ/abstract/-search=66117372.1/...
Abstract
Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/ AlGaAs heterostructure. Quantum point contacts and ( double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.
| Item Type: | Article |
|---|---|
| Subjects: | Material Science > Nanofabrication processes and tools |
| ID Code: | 6418 |
| Deposited By: | IoN |
| Deposited On: | 25 Sep 2009 09:40 |
| Last Modified: | 25 Sep 2009 09:40 |
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