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The formation mechanism of periodic Zn nanocrystal arrays embedded in an amorphous layer by rapid electron beam irradiation

Kim , TW and Shin, J. W. and No, Y. S. (2008) The formation mechanism of periodic Zn nanocrystal arrays embedded in an amorphous layer by rapid electron beam irradiation. NANOTECHNOLOGY, 19 (29).

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Official URL: http://www.iop.org/EJ/abstract/-search=66120280.1/...

Abstract

A periodic nano-island array of similar to 7 nm diameter Zn single crystals embedded in an amorphous Zn2xSi1-xO2 layer was created by using rapid electron beam irradiation for 50 s. A sequential process of 900 degrees C thermal annealing followed by electron beam irradiation induces the formation of an amorphous Zn2xSi1-xO2 layer containing periodic Zn nanocrystals. It is shown that the periodic Zn crystal array can be produced with good control of their size and spacing. Possible formation mechanisms for the Zn crystal nano-islands are described on the basis of the experimental results.

Item Type:Article
Uncontrolled Keywords:SILICON NANOCRYSTALS; ROOM-TEMPERATURE; STIMULATED DESORPTION; MEMORY; SIO2; SPECTROSCOPY; MICROSCOPE; TRANSISTOR; GOLD; DOTS
Subjects:Material Science > Functional and hybrid materials
Analytical Science > Microscopy and probe methods
Physical Science > Nanoelectronics
ID Code:6398
Deposited By:IoN
Deposited On:25 Sep 2009 12:20
Last Modified:25 Sep 2009 12:20

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