Twitchett-Harrison, Alison C. and Yates, Timothy J. V. and Newcomb, Simon B. and Dunin-Borkowski, Rafal E. and Midgley, Paul A. (2007) High-resolution three-dimensional mapping of semiconductor dopant potentials. NANO LETTERS, 7 (7). pp. 2020-2023.
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://pubs.acs.org/doi/abs/10.1021/nl070858n
Abstract
Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.
| Item Type: | Article |
|---|---|
| Subjects: | Physical Science > Nanoelectronics |
| ID Code: | 6354 |
| Deposited By: | IoN |
| Deposited On: | 07 Aug 2009 09:33 |
| Last Modified: | 07 Aug 2009 09:33 |
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