Twitchett-Harrison, Alison C. and Yates, Timothy J. V. and Newcomb, Simon B. and Dunin-Borkowski, Rafal E. and Midgley, Paul A. (2007) High-resolution three-dimensional mapping of semiconductor dopant potentials. NANO LETTERS, 7 (7). pp. 2020-2023.
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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl070858n
Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.
|Subjects:||Physical Science > Nanoelectronics|
|Deposited On:||07 Aug 2009 09:33|
|Last Modified:||07 Aug 2009 09:33|
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