Nano Archive

High-resolution three-dimensional mapping of semiconductor dopant potentials

Twitchett-Harrison, Alison C. and Yates, Timothy J. V. and Newcomb, Simon B. and Dunin-Borkowski, Rafal E. and Midgley, Paul A. (2007) High-resolution three-dimensional mapping of semiconductor dopant potentials. NANO LETTERS, 7 (7). pp. 2020-2023.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL: http://pubs.acs.org/doi/abs/10.1021/nl070858n

Abstract

Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
ID Code:6354
Deposited By:IoN
Deposited On:07 Aug 2009 09:33
Last Modified:07 Aug 2009 09:33

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