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Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides

Carroll, M. S. and Brewer, L. and Verley, J. C. and Banks, J. and Sheng, J. J. and Pan, W. and Dunn, R. (2007) Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides. NANOTECHNOLOGY, 18 (31).

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/18/31/315...

Abstract

In this study, silicon nanocrystal (Si-nc) growth is studied in a relatively long thermal budget regime, 3 h at 1100–1200 °C, to examine large diameter nanocrystals (i.e. average diameters greater than 5 nm). Morphology, defects within the nanocrystals and size dependence as a function of thickness in the oxide are exaggerated in this regime and are more readily characterized in the longer diffusion length regime. In particular, nearby surfaces, the silicon substrate and oxide surface, appear to deplete the excess silicon in the oxide, leading to a strong nanocrystal size dependence with position in the oxide. To pursue this work, silicon naocrystals were formed through a combination of high density plasma enhanced chemical vapour deposition (HDP-CVD) of silicon rich oxides (SRO) followed by phase separation of the SRO into Si-ncs and stoichiometric oxide (SiO2). Details of the characterization of the as-grown HDP-CVD SROs are included, and differences in the Si–O–Si stretch mode peak position dependence on [O] between HDP-CVD and previously reported plasma enhanced CVD are discussed.

Item Type:Article
Subjects:Material Science > Nanofabrication processes and tools
Material Science > Nanochemistry
ID Code:6350
Deposited By:IoN
Deposited On:11 Sep 2009 14:48
Last Modified:11 Sep 2009 14:48

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