Ding, L. and Chen, T. P. and Liu, Y. and Yang, M. and Wong, J. I. and Liu, K. Y. and Zhu, F. R. and Fung, S. (2007) The influence of the implantation dose and energy on the electroluminescence of Si+-implanted amorphous SiO2 thin films. NANOTECHNOLOGY, 18 (45).
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://www.iop.org/EJ/abstract/-search=66203822.1/...
Visible and infrared (IR) electroluminescence (EL) has been observed from a metal-oxide-semiconductor-like (MOS-like) structure with Si nanocrystals (nc-Si) embedded in the gate oxide fabricated with low-energy ion implantation. The EL spectra are found to consist of four Gaussian-shaped luminescence bands with their peak wavelengths at similar to 460, similar to 600, similar to 740, and similar to 1260 nm, respectively, among which the similar to 600 nm band is the dominant one. Different nanocrystal distributions are achieved by varying the implanted Si ion dose and implantation energy. The nanocrystal distribution is found to play an important role in the EL. The influence of the applied voltage, the implantation dose, and implantation energy on the luminescence bands has been investigated.
|Uncontrolled Keywords:||IRRADIATED ALPHA-QUARTZ; SILICON-DIOXIDE LAYERS; VISIBLE PHOTOLUMINESCENCE; GATE OXIDE; BAND-GAP; NANOCRYSTALS; LUMINESCENCE; SIO2-FILMS; BLUE; GLASS|
|Subjects:||Material Science > Functional and hybrid materials|
|Deposited On:||29 Sep 2009 10:14|
|Last Modified:||29 Sep 2009 10:14|
Repository Staff Only: item control page