Nano Archive

Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands

Chiu, C. H. and Lu, T. C. and Huang, H. W. and Lai, C. F. and Kao, C. C. and Chu, J. T. and Yu, C. C. and Kuo, H. C. and Wang, S. C. and Lin, C. F. and Hsueh, T. H. (2007) Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands. NANOTECHNOLOGY, 18 (44).

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Official URL: http://www.iop.org/EJ/abstract/-search=66204569.1/...

Abstract

We report the fabrication of InGaN/GaN nanorod light-emitting diodes (LEDs) using inductively coupled plasma reactive-ion etching (ICP-RIE) and a photo-enhanced chemical (PEC) wet oxidation process via self-assembled Ni nanomasks. An enhancement by a factor of six times in photoluminescence (PL) intensities of nanorods made with the PEC process was achieved in comparison to that of the as-grown structure. The peak wavelength observed from PL measurement showed a blue shift of 3.8 nm for the nanorods made without the PEC oxidation process and 8.6 nm for the nanorods made with the PEC oxidation process from that of the as-grown LED sample. In addition, we have demonstrated electrically pumped nanorod LEDs with the electroluminescence spectrum showing more efficiency and a 10.5 nm blue-shifted peak with respect to the as-grown LED sample.

Item Type:Article
Uncontrolled Keywords:GALLIUM NITRIDE - NANORODS - LED - RIE
Subjects:Material Science > Nanofabrication processes and tools
Physical Science > Photonics
ID Code:6337
Deposited By:IoN
Deposited On:29 Sep 2009 10:44
Last Modified:29 Sep 2009 10:44

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