Nano Archive

Growth of Ge islands and nanocrystals using RF magnetron sputtering and their characterization

Das, K. and Goswami, M. L. N. and Dhar, A. and Mathur, B. K. and Ray, S. K. (2007) Growth of Ge islands and nanocrystals using RF magnetron sputtering and their characterization. NANOTECHNOLOGY, 18 (17).

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Official URL: http://www.iop.org/EJ/abstract/0957-4484/18/17/175...

Abstract

Ge nanocrystals of different sizes and densities have been grown on p-Si(100) substrates by radio-frequency magnetron sputtering. We have also synthesized Ge nanocrystals embedded in a SiO2 matrix, using a suitable target, followed by post-deposition annealing at 900 degrees C in a N-2 atmosphere. Atomic force and transmission electron micrographs revealed the formation of Ge clusters on the Si and within the SiO2 matrix, respectively. Infrared and x-ray photoelectron spectroscopy were used to study the chemical bonding in the deposited films. Raman spectra for Ge embedded in the SiO2 matrix show a peak at 300 cm(-1) corresponding to the Ge-Ge phonon mode. A photoluminescence study has been performed at room temperature to detect the light emission from the Ge nanocrystals.

Item Type:Article
Subjects:Analytical Science > Microscopy and probe methods
Technology > Manufacturing processes for nanotechnology
Material Science > Nanostructured materials
Physical Science > Photonics
ID Code:6294
Deposited By:IoN
Deposited On:22 Dec 2009 09:55
Last Modified:22 Dec 2009 09:55

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