Nano Archive

Size limits on doping phosphorus into silicon nanocrystals

Chan, T. L. and Tiago, Murilo L. and Kaxiras, Efthimios and Cheikowsky, James R. (2008) Size limits on doping phosphorus into silicon nanocrystals. NANO LETTERS, 8 (2). pp. 596-600.

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Official URL: http://pubs.acs.org/doi/abs/10.1021/nl072997a

Abstract

We studied the electronic properties of phosphorus-doped silicon nanocrystals using the real-space first-principles pseudopotential method. We simulated nanocrystals with a diameter of up to 6 nm and made a direct comparison with experimental measurement for the first time for these systems. Our calculated size dependence of hyperfine splitting was in excellent agreement with experimental data. We also found a critical nanocrystal size below which we predicted that the dopant will be ejected to the surface.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
ID Code:6274
Deposited By:IoN
Deposited On:07 Aug 2009 12:04
Last Modified:07 Aug 2009 12:04

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