Cheng, Qijin and Xu, S. and Long, Jidong and Huang, Shiyong and Guo, Jun (2007) Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition. NANOTECHNOLOGY, 18 (46).
Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.
Official URL: http://www.iop.org/EJ/abstract/0957-4484/18/46/465...
Silicon carbide films with different carbon concentrations xC have been synthesized by inductively coupled plasma chemical vapor deposition from a SiH4/CH4/H2 gas mixture at a low substrate temperature of 500 °C. The characteristics of the films were studied by x-ray photoelectron spectroscopy, x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared absorption spectroscopy, and Raman spectroscopy. Our experimental results show that, at xC = 49 at.%, the film is made up of homogeneous nanocrystalline cubic silicon carbide without any phase of silicon, graphite, or diamond crystallites/clusters. The average size of SiC crystallites is approximately 6 nm. At a lower value of xC, polycrystalline silicon and amorphous silicon carbide coexist in the films. At a higher value of xC, amorphous carbon and silicon carbide coexist in the films.
|Subjects:||Material Science > Tunnelling and microscopic phenomena|
Material Science > Nanostructured materials
|Deposited On:||10 Sep 2009 12:21|
|Last Modified:||10 Sep 2009 12:21|
Repository Staff Only: item control page