Nano Archive

Charge state control and relaxation in an atomically doped silicon device

Andresen, Seren E. S. and Brenner, Rolf and Wellard, Cameron J. and Yang, Changyi and Hopf, Toby and Escott, Christopher C. and Clark, Robert G. and Dzurak, Andrew S. and Jamieson, David N. and Hollenberg, Lloyd C. L. (2007) Charge state control and relaxation in an atomically doped silicon device. NANO LETTERS, 7 (7). pp. 2000-2003.

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Official URL: http://pubs.acs.org/doi/full/10.1021/nl070797t

Abstract

We demonstrate time-resolved control and detection of single-electron transfers in a silicon device implanted with exactly two phosphorus donors. Charge state relaxation at millikelvin temperature is shown to be dominated by phonon emission and background charge fluctuations for low energies, while higher-order processes take over at higher energies. Our results reveal relaxation times for single-donor charge states of several milliseconds, which have significant implications for single-atom nanoelectronics.

Item Type:Article
Uncontrolled Keywords:SINGLE-ION IMPLANTATION; QUANTUM COMPUTER; ELECTRON-SPIN; SI; DOTS
Subjects:Engineering > Nanotechnology applications in ICT
ID Code:6191
Deposited By:IoN
Deposited On:10 Sep 2009 11:43
Last Modified:10 Sep 2009 11:43

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