Nano Archive

The peculiar electronic structure of PbSe quantum dots

An, J. M. and Franceschetti, A. and Dudiy, S. V. and Zunger, Alex (2006) The peculiar electronic structure of PbSe quantum dots. NANO LETTERS, 6 (12). pp. 2728-2735.

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


PbSe is a pseudo-II-VI material distinguished from ordinary II-VI's (e.g., CdSe, ZnSe) by having both its valence band maximum (VBM) and its conduction band minimum (CBM) located at the fourfold-degenerate L-point in the Brillouin zone. It turns out that this feature dramatically affects the properties of the nanosystem. We have calculated the electronic and optical properties of PbSe quantum dots using an atomistic pseudopotential method, finding that the electronic structure is different from that of ordinary II-VI's and, at the same time, is more subtle than what k center dot p or tight-binding calculations have suggested previously for PbSe. We find the following in PbSe dots: (i) The intraband (valence-to-valence and conduction-to-conduction) as well as interband (valence-to-conduction) excitations involve the massively split L-manifold states. (ii) In contrast to previous suggestions that the spacings between valence band levels will equal those between conduction band levels (because the corresponding effective-masses m(e) approximate to m(h) are similar), we find a densely spaced hole manifold and much sparser electron manifold. This finding reflects the existence of a few valence band maxima in bulk PbSe within similar to 500 meV. This result reverses previous expectations of slow hole cooling in PbSe dots. (iii) The calculated optical absorption spectrum reproduces the measured absorption peak that had previously been attributed to the forbidden 1S(h) -> 1P(e) or 1P(h) -> 1S(e) transitions on the basis of k center dot p calculations. However, we find that this transition corresponds to an allowed 1P(h) -> 1P(e) excitation arising mainly from bulk states near the L valleys on the Gamma-L lines of the Brillouin zone. We discuss this reinterpretation of numerous experimental results.

Item Type:Article
Subjects:Physical Science > Nanoelectronics
Engineering > Nanotechnology applications in ICT
ID Code:6166
Deposited By:IoN
Deposited On:11 Sep 2009 13:53
Last Modified:11 Sep 2009 13:53

Repository Staff Only: item control page