Rolo, A. G. and Chahboun, A. and Conde, O. and Vasilevskiy, M. I. and Gomes, M. J. M. (2008) Annealing effect on the photoluminescence of Ge-doped silica films. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 40 (3). pp. 674-679.
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Abstract
SiO2 thin films doped with Ge nanocrystals (NCs) were grown using the RF-sputtering technique. X-ray diffraction studies revealed a diamond structure for Ge NCs. The presence of Ge NCs in the grown films was also confirmed by Raman spectroscopy. Photoluminescence spectroscopy of the samples revealed an emission band at 2.07 eV, which is tentatively attributed to defects located at the Ge-matrix interface. This was found to be quite sensitive to variations of local matrix composition, induced by the annealing process. (C) 2007 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | germanium; nanocrystals; photoluminescence; defects |
| Subjects: | Physical Science > Nanophysics Analytical Science > Microscopy and probe methods Physical Science > Photonics |
| ID Code: | 6151 |
| Deposited By: | IoN |
| Deposited On: | 12 Apr 2010 16:20 |
| Last Modified: | 12 Apr 2010 16:20 |
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