Kalliakos, Sokratis and Pellegrini, Vittorio and Garcia, Cesar Pascual and Pinczuk, Aron and Pfeiffer, Loren N. and West, Ken W. (2008) Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots. NANO LETTERS, 8 (2). pp. 577-581.
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Official URL: http://pubs.acs.org/doi/full/10.1021/nl072904p
Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.
|Uncontrolled Keywords:||quantum confinement - nanofabrication - quantum dots - metallic gates|
|Subjects:||Material Science > Nanofabrication processes and tools|
Physical Science > Nanoelectronics
|Deposited On:||15 Sep 2009 09:42|
|Last Modified:||15 Sep 2009 09:42|
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