Nano Archive

Surface morphology evolution of GaAs by low energy ion sputtering

Wang, Y. and Yoon, S. F. and Ngo, C. Y. and Ahn, J. (2007) Surface morphology evolution of GaAs by low energy ion sputtering. NANOSCALE RESEARCH LETTERS, 2 (10). pp. 504-508.

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Low energy Ar+ ion sputtering, typically below 1,200 eV, of GaAs at normal beam incident angle is investigated. Surface morphology development with respect to varying energy is analyzed and discussed. Dot-like patterns in the nanometer scale are obtained above 600 eV. As the energy approaches upper eV range regular dots have evolved. The energy dependent dot evolution is evaluated based on solutions of the isotropic Kuramoto-Sivashinsky equation. The results are in agreement with the theoretical model which describes a power law dependency of the characteristic wavelength on ion energy in the ion-induced diffusion regime.

Item Type:Article
Uncontrolled Keywords:low energy; ion sputtering; surface morphology; GaAs quantum dot
Subjects:Material Science > Nanofabrication processes and tools
ID Code:6140
Deposited By:IoN
Deposited On:23 Sep 2009 09:58
Last Modified:23 Sep 2009 09:58

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