Nano Archive

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

Rossler, C. and Bichler, M. and Schuh, D. and Wegscheider, W. and Ludwig, S. (2008) Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures. NANOTECHNOLOGY, 19 (16).

Full text is not hosted in this archive but may be available via the Official URL, or by requesting a copy from the corresponding author.

Official URL:


Free-standing beams containing a two-dimensional electron system are shaped from a GaAs/ AlGaAs heterostructure. Quantum point contacts and ( double) quantum dots are laterally defined using metal top gates. We investigate the electronic properties of these nanostructures by transport spectroscopy. Tunable localized electron states in freely suspended nanostructures are a promising tool to investigate the electron-phonon interaction.

Item Type:Article
Uncontrolled Keywords:Condensed matter: electrical, magnetic and optical Surfaces, interfaces and thin films Nanoscale science and low-D systems
Subjects:Physical Science > Nanophysics
Physical Science > Nanoelectronics
Physical Science > Quantum phenomena
Physical Science > Photonics
ID Code:6123
Deposited By:IoN
Deposited On:02 Apr 2010 16:53
Last Modified:02 Apr 2010 16:53

Repository Staff Only: item control page